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IRF9Z34NPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF9Z34NPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRF9Z34NPbF Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.6 V TJ = 25°C, IS = -10A, VGS = 0V trr Reverse Recovery Time 54 82 ns TJ = 25°C, IF = -10A Qrr Reverse RecoveryCharge 110 160 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.05 V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance 0.10 Ω VGS = -10V, ID = -10A VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 4.2 S VDS = 25V, ID = -10A -25 µA VDS = -55V, VGS = 0V -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 nA VGS = -20V Qg Total Gate Charge 35 ID = -10A Qgs Gate-to-Source Charge 7.9 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge 16 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 13 VDD = -28V tr Rise Time 55 ID = -10A td(off) Turn-Off Delay Time 30 RG = 13Ω tf Fall Time 41 RD = 2.6Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 620 VGS = 0V Coss Output Capacitance 280 pF VDS = -25V Crss Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 3.6mH RG = 25Ω, IAS = -10A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Source-Drain Ratings and Characteristics A S D G -19 -68 |
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