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STP4NK60Z Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP4NK60Z
Descripción Electrónicos  N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STP4NK60Z Datasheet(HTML) 5 Page - STMicroelectronics

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STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Electrical characteristics
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Table 8.
Gate-source Zener diode
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
4
16
A
A
VSD
(2)
2.
Pulse width limited by safe operating area
Forward on voltage
ISD = 4 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs
VDD = 24 V, Tj = 150 °C
(see Figure 19)
400
1700
8.5
ns
nC
A
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1 mA (open drain)
30
V


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