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CAT93HC46SETE13 Datasheet(PDF) 2 Page - Catalyst Semiconductor

No. de pieza CAT93HC46SETE13
Descripción Electrónicos  1-kb High Speed Microwire Serial EEPROM
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Fabricante Electrónico  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT93HC46SETE13 Datasheet(HTML) 2 Page - Catalyst Semiconductor

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Discontinued
Part
2
CAT93HC46
Doc. No. 1008, Rev. H
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55
°C to +125°C
Storage Temperature ........................ -65
°C to +150°C
Pin with Respect to Ground(1) .... -2.0 V to VCC + 2.0 V
VCC with Respect to Ground ................ -2.0 V to 7.0 V
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside of those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended periods
may affect device performance and reliability.
RELIABILITY CHARACTERISTICS
Note:
(1) The minimum DC input voltage is -0.5 V. During transitions, inputs may undershoot to -2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
(2) Output shorted for no more than one second.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on I/O pins from -1 V to VCC + 1 V.
(5) Standby Current (ISB2) = 0 µA (<900 nA).
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D.C. OPERATING CHARACTERISTICS
Industrial Temperature Range (-40
°C to 85°C)
Limits
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ICC1
Power Supply Current (Write)
2
mA
fSK = 4 MHz, VCC = 5.0 V
ICC2
Power Supply Current (Read)
200
µAfSK = 4 MHz, VCC = 5.0 V
ISB1
Standby Supply Current (x8)
10
µA
CS = GND, ORG=GND
ISB2(5)
Standby Supply Current (x16)
0
10
µA
CS = GND, ORG = Float or VCC
ILI
Input Leakage Current
1
µAVIN = 0 V to VCC, CS = GND
ILO
Output Leakage Current
1
µAVOUT = 0 V to VCC, CS = GND
VIL1
Input Low Voltage
-0.1
0.8
4.5 V
≤ VCC < 5.5 V
VIH1
Input High Voltage
2
VCC + 1
4.5 V
≤ VCC < 5.5 V
VIL2
Input Low Voltage
0
VCC x 0.2
1.8 V
≤ VCC < 4.5 V
VIH2
Input High Voltage
VCC x 0.7
VCC + 1
1.8V
≤ VCC < 4.5 V
VOL1
Output Low Voltage
0.4
4.5 V
≤ VCC < 5.5 V, IOL = 2.1 mA
VOH1
Output High Voltage
2.4
V
4.5 V
≤ VCC < 5.5 V, IOH = -400 µA
VOL2
Output Low Voltage
0.2
1.8 V
≤ VCC < 4.5 V, IOL = 1 mA
VOH2
Output High Voltage
VCC - 0.2
1.8 V
≤ VCC < 4.5 V, IOH = -100 µA


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