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CAT93HC46UETE13 Datasheet(PDF) 4 Page - Catalyst Semiconductor

No. de pieza CAT93HC46UETE13
Descripción Electrónicos  1-kb High Speed Microwire Serial EEPROM
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Fabricante Electrónico  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT93HC46UETE13 Datasheet(HTML) 4 Page - Catalyst Semiconductor

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Part
4
CAT93HC46
Doc. No. 1008, Rev. H
DEVICE OPERATION
The CAT93HC46 is a 1024-bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93HC46 can be organized as registers of either
16 bits or 8 bits. When organized as X16, seven 9-bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
10-bit instructions control the operation of the device.
The CAT93HC46 operates on a single power supply and
will generate on chip the high voltage required during
write operation.
Instructions, addresses, and data are clocked into the DI
pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state, except when reading
data from the device, or when checking the ready/busy
status after a write operation.
The ready/busy status can be determined after the start
of a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that
the device is ready for the next instruction. If necessary,
the DO pin may be placed back into a high impedance
state by shifting a dummy “1” into the DI pin. The DO pin
will enter the high impedance state on the falling edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin
and the DO pin are to be tied together to form a common
DI/O pin.
The format for all instructions sent to the device is a
logical "1" start bit, a 2-bit (or 4-bit) opcode, 6-bit byte/
word address (an additional bit when organized X8) and
for write operations a 16-bit data field (8-bit for X8
organization).
Figure 1. Sychronous Data Timing
SK
DI
CS
DO
tDIS
tPD0,tPD1
tCSMIN
tCSS
tDIS
tDIH
tSKHI
tCSH
VALID
VALID
DATA VALID
tSKLOW
INSTRUCTION SET
Start
Address
Data
Instruction
Bit
Opcode
x8
x16
x8
x16
Comments
READ
1
10
A6-A0
A5-A0
Read Address AN–A0
ERASE
1
11
A6-A0
A5-A0
Clear Address AN–A0
WRITE
1
01
A6-A0
A5-A0
D7-D0
D15-D0 Write Address AN–A0
EWEN
1
00
11XXXXX
11XXXX
Write Enable
EWDS
1
00
00XXXXX
00XXXX
Write Disable
ERAL
1
00
10XXXXX
10XXXX
Clear All Addresses
WRAL
1
00
01XXXXX
01XXXX
D7-D0
D15-D0 Write All Addresses


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