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TPS74901RGWR Datasheet(PDF) 3 Page - Texas Instruments |
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TPS74901RGWR Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 26 page  www.ti.com ELECTRICAL CHARACTERISTICS TPS749xx SBVS082B – JUNE 2007 – REVISED OCTOBER 2007 At TJ = –40°C to +125°C, VEN = 1.1V, VIN = VOUT + 0.3V, CBIAS = 0.1μF, CIN = COUT = 10μF, CNR = 1nF, IOUT = 50mA, and VBIAS = 5.0V, unless otherwise noted. Typical values are at TJ = +25°C. TPS74901 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIN Input voltage range VOUT + VDO 5.5 V VBIAS Bias pin voltage range 2.7 5.5 V VREF Internal reference (Adj.) TJ = +25°C 0.798 0.802 0.806 V Output voltage range VIN = 5V, IOUT = 3.0V VREF 3.6 V Accuracy VOUT + 2.2V ≤ VBIAS ≤ 5.5V, –2 ±0.5 2 % VOUT (RGW package) (1) 50mA ≤ IOUT ≤ 3.0A Accuracy VOUT + 2.4V ≤ VBIAS ≤ 5.5V, –2 ±0.5 2 % (KTW package)(1) 50mA ≤ IOUT ≤ 3.0A VOUT/VIN Line regulation VOUT (NOM) + 0.3 ≤ VIN ≤ 5.5V 0.03 %/V VOUT/IOUT Load regulation 50mA ≤ IOUT ≤ 3.0A 0.09 %/A IOUT = 3.0A, VIN dropout voltage (2) 120 280 mV VBIAS – VOUT (NOM) ≥ 3.25V (3) VDO VBIAS dropout voltage (2) IOUT = 3.0A, VIN = VBIAS 1.31 1.75 V VOUT = 80% × VOUT (NOM), RGW 3.9 4.6 5.5 Package ICL Current limit A VOUT = 80% × VOUT (NOM), KTW 3.8 4.6 5.5 Package IBIAS Bias pin current 1 2 mA Shutdown supply current ISHDN VEN ≤ 0.4V 1 50 μA (IGND) IFB Feedback pin current –1 0.150 1 μA 1kHz, IOUT = 1.5A, 60 VIN = 1.8V, VOUT = 1.5V Power-supply rejection dB (VIN to VOUT) 300kHz, IOUT = 1.5A, 30 VIN = 1.8V, VOUT = 1.5V PSRR 1kHz, IOUT = 1.5A, 50 VIN = 1.8V, VOUT = 1.5V Power-supply rejection dB (VBIAS to VOUT) 300kHz, IOUT = 1.5A, 30 VIN = 1.8V, VOUT = 1.5V 100Hz to 100kHz, Noise Output noise voltage 25 × V OUT μVRMS IOUT = 3.0A, CSS = 0.001μF tSTR Minimum startup time RLOAD for IOUT = 1.0A, CSS = open 200 μs ISS Soft-start charging current VSS = 0.4V 440 nA VEN, HI Enable input high level 1.1 5.5 V VEN, LO Enable input low level 0 0.4 V VEN, HYS Enable pin hysteresis 50 mV VEN, DG Enable pin deglitch time 20 μs IEN Enable pin current VEN = 5V 0.1 1 μA VIT PG trip threshold VOUT decreasing 85 90 94 %VOUT VHYS PG trip hysteresis 3 %VOUT VPG, LO PG output low voltage IPG = 1mA (sinking), VOUT < VIT 0.3 V IPG, LKG PG leakage current VPG = 5.25V, VOUT > VIT 0.1 1 μA Operating junction TJ –40 +125 °C temperature Shutdown, temperature increasing +165 Thermal shutdown TSD °C temperature Reset, temperature decreasing +140 (1) Adjustable devices tested at 0.8V; resistor tolerance is not taken into account. (2) Dropout is defined as the voltage from VIN to VOUT when VOUT is 3% below nominal. (3) 3.25V is a test condition of this device and can be adjusted by referring to Figure 8. Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS749xx |
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