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1N5224B Datasheet(PDF) 3 Page - Continental Device India Limited |
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1N5224B Datasheet(HTML) 3 Page - Continental Device India Limited |
3 / 5 page SILICON PLANAR ZENER DIODES 1N5223B to 1N5279B 2.7V to 180V DO- 35 Glass Axial Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) Forward Voltage at IF=200mA VF <1.1 V No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance Device Nominal Test Max Zener (Note 1) Voltage Current Voltage VZ @ IZT IZT Temp. Coeff. θθVz(Note 3) ZZT @ ZZK @ IZT IZK=0.25mA (A&B Suffix only) V mA Ω Ω Ω Ω α α V Z (% /ºC) 1N5270B 91 1.4 400 2300 0.099 1N5271B 100 1.3 500 2600 0.099 1N5272B 110 1.1 750 3000 0.11 1N5273B 120 1.0 900 4000 0.11 1N5274B 130 0.95 1100 4500 0.11 1N5275B 140 0.90 1300 4500 0.11 1N5276B 150 0.85 1500 5000 0.11 1N5277B 160 0.80 1700 5500 0.11 1N5278B 170 0.74 1900 5500 0.11 1N5279B 180 0.68 2200 6000 0.11 NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case. NOTE 2: The zener impedance is derived from the 50 Hz AC voltage, which results when AC current having an RMS value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby, eliminating unstable units. NOTE 3: Temperature coefficient ( θθV z). Test conditions for temperature coefficient are as follows. a. IZT=7.5mA, Tj=25ºC T2=125ºC(1N5223A, B thru 1N5242A, B ) b. IZT=Rated IZT, TJ=25ºC T2=125ºC(1N5243A, B thru 1N5279A, B ) Device to be temperature stabilized with current applied prior to reading brekdown voltage at the specified ambient Rwmerature 1N5223B_5279B Rev_2 080605E 69 76 84 91 0.1 Max Zener Max Reverse Leakage Current Impedance 0.1 0.1 A & B Suffix only IR at VR (Note 2) µµA V 0.1 0.1 0.1 0.1 0.1 99 106 114 122 129 137 0.1 0.1 Continental Device India Limited Data Sheet Page 3 of 5 |
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Descripción similar - 1N5224B |
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