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STP10NM65N Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP10NM65N
Descripción Electrónicos  N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10NM65N Datasheet(HTML) 3 Page - STMicroelectronics

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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical ratings
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/IPAK
DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
650
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
9
9(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
5.7
5.7(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
36
36(1)
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
dv/dt (3)
3.
ISD ≤ 9 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC = 25 °C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
TO-220
IPAK
DPAK
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case
max
1.38
5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
--
--
50
--
°C/W
Rthj-amb
Thermal resistance junction-amb
max
62.5
100
--
62.5
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD= 50 V)
300
mJ


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