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SI6983DQ Datasheet(PDF) 1 Page - Vishay Siliconix

No. de Pieza. SI6983DQ
Descripción  Dual P-Channel 20-V (D-S) MOSFET
Descarga  6 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI6983DQ Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Vishay Siliconix
Si6983DQ
New Product
Document Number: 72367
S-60774-Rev. C, 08-May-06
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
APPLICATIONS
Load Switch
Battery Switch
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
- 20
0.024 at VGS = - 4.5 V
- 5.4
0.030 at VGS = - 2.5 V
- 4.8
0.042 at VGS = - 1.8 V
- 4.0
Si6983DQ-T1-E3 (Lead (Pb)-free)
Ordering Information: Si6983DQ-T1
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
TSSOP-8
Top View
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
- 5.4
- 4.6
A
TA = 70 °C
- 4.3
- 3.7
Pulsed Drain Current (10 µs Pulse Width)
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 1.0
- 0.7
Maximum Power Dissipationa
TA = 25 °C
PD
1.14
0.83
W
TA = 70 °C
0.73
0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
86
110
°C/W
Steady State
124
150
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
52
65
Available
Pb-free
RoHS*
COMPLIANT


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