Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼

Delete All
ON OFF
ALLDATASHEET.ES

X  

Preview PDF Download HTML

SI6983DQ Datasheet(PDF) 2 Page - Vishay Siliconix

No. de Pieza. SI6983DQ
Descripción  Dual P-Channel 20-V (D-S) MOSFET
Descarga  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo 

SI6983DQ Datasheet(HTML) 2 Page - Vishay Siliconix

   
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.vishay.com
2
Document Number: 72367
S-60774-Rev. C, 08-May-06
Vishay Siliconix
Si6983DQ
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 400 µA
- 0.40
- 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 25
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
- 20
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 5.4 A
0.019
0.024
Ω
VGS = - 2.5 V, ID = - 4.8 A
0.024
0.030
VGS = - 1.8 V, ID = - 4.0 A
0.033
0.042
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 5.4 A
25
S
Diode Forward Voltagea
VSD
IS = - 1.0 A, VGS = 0 V
- 0.63
1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.4 A
20
30
nC
Gate-Source Charge
Qgs
3.0
Gate-Drain Charge
Qgd
4.5
Gate Resistance
Rg
f = 1.0 MHz
4.5
Ω
Turn-On Delay Time
td(on)
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
40
60
ns
Rise Time
tr
55
85
Turn-Off Delay Time
td(off)
135
200
Fall Time
tf
52
80
Source-Drain Reverse Recovery Time
trr
IF = - 1.0 A, di/dt = 100 A/µs
40
70
Output Characteristics
0
6
12
18
24
30
012345
VGS = 5 thru 2.5 V
VDS - Drain-to-Source Voltage (V)
2 V
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)


Html Pages

1  2  3  4  5  6 


Datasheet Download




Enlace URL




Privacy Policy
ALLDATASHEET.ES
Does ALLDATASHEET help your business so far?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn