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M27C4001-90XC1X Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza M27C4001-90XC1X
Descripción Electrónicos  4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M27C4001-90XC1X Datasheet(HTML) 6 Page - STMicroelectronics

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System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1
µF ceram-
ic capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
Figure 5. Read Mode AC Waveforms
AI00724B
tAXQX
tEHQZ
A0-A18
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27C4001
Unit
-70
-80/-90
-10/-12/-15
Min
Max
Min
Max
Min
Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
70
80
100
ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
70
80
100
ns
tGLQV
tOE
Output Enable Low to
Output Valid
E = VIL
35
40
50
ns
tEHQZ
(2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
030
0
300
30
ns
tGHQZ
(2)
tDF
Output Enable High to
Output Hi-Z
E = VIL
030
0
300
30
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
000
ns


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