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SPB20N60S5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SPB20N60S5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - ambient (Leaded and through-hole packages) RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA - - - 35 62 - Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 600 - - V Gate threshold voltage, VGS = VDS ID = 1 mA, Tj = 25 °C VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 °C VGS = 0 V, Tj = 150 °C IDSS - - 0.5 - 25 250 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - - 100 nA Drain-source on-state resistance VGS = 10 V, ID = 13 A RDS(on) - 0.16 0.19 Ω 1current limited by Tjmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. |
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