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STD130GK12 Datasheet(Hoja de datos) 3 Page - Sirectifier Semiconductors

No. de Pieza. STD130GK12
Descripción  Thyristor-Diode Modules, Diode-Thyristor Modules
Descarga  4 Pages
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Fabricante  SIRECTIFIER [Sirectifier Semiconductors]
Página de inicio  http://www.sirectifier.com
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STD/SDT130
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3
Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 1 Surge overload current
I
TSM, IFSM: Crest value, t: duration
s
t
ms
t
0.001
0.01
0.1
1
0
1000
2000
3000
4000
1
1
0
104
105
106
A2s
I
TSM
A
i2t
T
VJ = 45°C
T
VJ = 125°C
80 % V
RRM
T
VJ = 45°C
50 Hz
T
VJ = 125°C
Fig. 4 Gate trigger characteristics
Fig. 6 Gate trigger delay time
3 x STD/SDT130




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