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STD100GK12 Datasheet(Hoja de datos) 2 Page - Sirectifier Semiconductors

No. de Pieza. STD100GK12
Descripción  Thyristor-Diode Modules, Diode-Thyristor Modules
Descarga  4 Pages
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Fabricante  SIRECTIFIER [Sirectifier Semiconductors]
Página de inicio  http://www.sirectifier.com
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STD/SDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
V
VT, VF
IT, IF=300A; TVJ=25
oC
1.74
VTO
For power-loss calculations only (TVJ=TVJM)
0.85
V
rT
3.2
m
VD=6V;
TVJ=25
oC
TVJ=-40
oC
VGT
1.5
1.6
V
VD=6V;
TVJ=25
oC
TVJ=-40
oC
IGT
100
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
10
mA
IH
TVJ=25
oC; VD=6V; RGK=
150
mA
TVJ=25
oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
200
mA
IL
per thyristor/diode; DC current
per module
RthJC
0.22
0.11
K/W
per thyristor/diode; DC current
per module
RthJK
0.42
0.21
K/W
dS
Creeping distance on surface
12.7
mm
dA
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
15
mA
TVJ=25
oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tgd
2
us
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq
185
us
uC
QS
TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
170
IRM
45
A
FEATURES
* International standard package
* Planar passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
TVJ=TVJM;
VD=2/3VDRM
* Copper base plate




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