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STQ1NE10L Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STQ1NE10L
Descripción  N-channel 100V - 0.3Ω - 1A - TO-92 STripFET™ Power MOSFET
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STQ1NE10L Datasheet(HTML) 5 Page - STMicroelectronics

 
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Obsolete
Product(s)
- Obsolete
Product(s)
STQ1NE10L
Electrical characteristics
5/13
Table 5.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
1
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
4
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=1A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1A,
di/dt = 100A/µs,
VDD=30V, TJ = 100°C
52
90
3.5
ns
nC
A


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