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STF30NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STF30NM60ND
Descripción Electrónicos  N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF30NM60ND Datasheet(HTML) 1 Page - STMicroelectronics

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Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
November 2007
Rev 1
1/15
15
STP/F30NM60ND-STW30NM60ND
STB30NM60ND-STI30NM60ND
N-channel 600V - 0.11
Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247
FDmesh™ II Power MOSFET (with fast diode)
Features
The world’s best RDS(on)*in TO-220 amongst
the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Figure 1.
Internal schematic diagram
Type
VDSS
RDS(on) Max
ID
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
600V
600V
600V
600V
600V
< 0.13
< 0.13
< 0.13
< 0.13
< 0.13
25A
25A
25A(1)
25A
25A
1.
Limited only by maximum temperature allowed
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D2PAK
1
2
3
I2PAK
TO-247
1
2
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB30NM60ND
30NM60ND
D²PAK
Tape & reel
STI30NM60ND
30NM60ND
I²PAK
Tube
STF30NM60ND
30NM60ND
TO-220FP
Tube
STP30NM60ND
30NM60ND
TO-220
Tube
STW30NM60ND
30NM60ND
TO-247
Tube
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