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SI4642DY Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI4642DY
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4642DY Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4642DY
New Product
Document Number: 74430
S-71069-Rev. A, 21-May-07
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
SkyFET
Monolithic TrenchFET® Power
MOSFET and Schottky Diode
100 % Rg and UIS Tested
APPLICATIONS
Notebook CPU Core
Buck Converter
Synchronous Rectifier Switch
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
a
Qg (Typ)
30
0.00375 at VGS = 10 V
34
35.7 nC
0.0047 at VGS = 4.5 V
30
SO-8
S
D
S
D
S
D
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4642DY-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
S
D
Schottky Diode
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 80 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
34
A
TC = 70 °C
27
TA = 25 °C
22.7b, c
TA = 70 °C
18b, c
Pulsed Drain Current
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
IS
7
TA = 25 °C
3.1b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
45
Single Pulse Avalanche Energy
EAS
101
mJ
Maximum Power Dissipation
TC = 25 °C
PD
7.8
W
TC = 70 °C
5
TA = 25 °C
3.5b, c
TA = 70 °C
2.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 sec
RthJA
29
35
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
13
16
RoHS
COMPLIANT


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