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STE250NS10 Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STE250NS10
Descripción  N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET™ Power MOSFET
Descarga  12 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STE250NS10 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STE250NS10
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
220
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
880
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 220A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 220A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 15)
200
1.35
13.5
ns
µC
A


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