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X006 Datasheet(PDF) 4 Page - STMicroelectronics |
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X006 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 9 page Characteristics X006 4/9 Figure 5. Average and DC on-state current versus ambient temperature (epoxy PCB FR4, copper thickness = 35 µm, SCU = 5 cm 2) (SOT-223) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (PCB FR4, copper thickness = 35 µm, SCU = 0.5 cm2) (TO-92) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25 50 75 100 125 I (A) T(AV) T (°C) amb α = 180° D.C. SOT-223 S = 0.5 cm CU 2 0.01 0.10 1.00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z/R th(j-a) th(j-a) t (s) p TO-92 S = 0.5 cm CU 2 Figure 7. Relative variation of thermal impedance junction to ambient versus pulse duration (PCB FR4, copper thickness = 35 µm, SCU = 0.5 cm2) (SOT-223) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (PCB FR4, copper thickness = 35 µm) (SOT-223) 0.01 0.10 1.00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z/R th(j-a) th(j-a) t (s) p SOT-223 S = 0.5 cm CU 2 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(cm²) R (°C/W) th(j-a) Figure 9. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 10. Relative variation of holding current versus gate-cathode resistance (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 T (°C) j I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j IGT IH & IL 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 R(k ) GK Ω I [R ] / I [ =1k ] HGK H Ω RGK |
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