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STB16NM50N Datasheet(PDF) 3 Page - STMicroelectronics

No. de Pieza. STB16NM50N
Descripción  N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Descarga  18 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STB16NM50N Datasheet(HTML) 3 Page - STMicroelectronics

 
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STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
15
15 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
9.4
9.4 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
60
60 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
dv/dt (3)
3.
ISD ≤15A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
Rthj-case
Thermal resistance junction-
case max
1
4.2
°C/W
Rthj-amb
Thermal resistance junction-
amb max
62.5
--
50
62.5
°C/W
Rthj-pcb
Thermal resistance junction-
pcb max
--
--
30
--
--
°C/W
Tl
Maximum lead temperature for
soldering purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
6A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
470
mJ


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