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STE180NE10_07 Datasheet(Hoja de datos) 4 Page - STMicroelectronics

No. de Pieza. STE180NE10_07
Descripción  N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET
Descarga  12 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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 4 page
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Electrical characteristics
STE180NE10
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID =1mA, VGS =0
100
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125°C
4
40
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±400
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 40A
4.5
6
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance
VDS>ID(on)xRDS(on)max
ID=80 A
30
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
21
2.5
0.9
nF
nF
nF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 90V, ID = 490A
RG =4.7Ω VGS = 10V
(see Figure 12)
100
600
430
440
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80V, ID = 180A,
VGS = 10V, RG =4.7Ω
(see Figure 13)
585
120
210
795
nC
nC
nC




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