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CAT6217-150TD-GT3 Datasheet(PDF) 2 Page - Catalyst Semiconductor

No. de pieza CAT6217-150TD-GT3
Descripción Electrónicos  150mA CMOS LDO Regulator
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Fabricante Electrónico  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT6217-150TD-GT3 Datasheet(HTML) 2 Page - Catalyst Semiconductor

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CAT6217
Doc. No. MD-10011 Rev. D
2
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PIN DESCRIPTIONS
Pin # Name Function
1
VIN
Supply voltage input.
2
GND
Ground reference.
3
EN
Enable input (active high); a 2.5MΩ
pull-down resistor is provided.
4
BYP
Optional bypass capacitor connection
for noise reduction and PSRR
enhancing.
5
VOUT LDO Output Voltage.
BLOCK DIAGRAM
Figure 2. CAT6217 Functional Block Diagram
PIN FUNCTION
VIN is the supply pin for the LDO. A small 1μF
ceramic bypass capacitor is required between the VIN
pin and ground near the device. When using longer
connections to the power supply, CIN value can be
increased without limit. The operating input voltage
range is from 2.3V to 5.5V.
EN is the enable control logic (active high) for the regulator
output. It has a 2.5MΩ pull-down resistor, which
assures that if EN pin is left open, the circuit is disabled.
VOUT is the LDO regulator output. A small 1μF
ceramic bypass capacitor is required between the VOUT
pin and ground for stability. For better transient
response, its value can be increased to 4.7μF.
The capacitor should be located near the device. ESR
domain is 5mΩ to 500mΩ. VOUT can deliver a
maximum guaranteed current of 150mA. A 250Ω
internal shutdown switch discharges the output
capacitor in the no-load condition.
GND is the ground reference for the LDO. The pin
must be connected to the ground plane on the PCB.
BYP is the reference bypass pin. An optional 0.01μF
capacitor can be connected between BYP pin and
GND to reduce the output noise and enhance the
PSRR at high frequency.
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Rating
Unit
VIN
0 to 6.5
V
VEN, VOUT
-0.3 to VIN+0.3
V
Junction Temperature, TJ
+150
°C
Power Dissipation, PD
Internally Limited
(2)
mW
Storage Temperature Range, TS
-65 to +150
°C
Lead Temperature (soldering, 5 sec.)
260
°C
ESD Rating (Human Body Model)
3
kV
RECOMMENDED OPERATING CONDITIONS (3)
Parameter
Range
Unit
VIN
2.3 to 5.5
V
VEN
0 to VIN
V
Junction Temperature Range, TJ
-40 to +125
°C
Package Thermal Resistance (SOT23-5),
θJA
235
°C/W
Typical application circuit with external components is shown on page 1.
Notes:
(1) Exceeding maximum rating may damage the device
(2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax – TA)/θJA. Exceeding the maximum allowable
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.
(3) The device is not guaranteed to work outside its operating rating.
BYP
EN
GND
VIN
VOUT
VIN
VOUT
Shutdown
Switch
LDO
Reference


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