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ST62T35B Datasheet(PDF) 67 Page - STMicroelectronics |
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ST62T35B Datasheet(HTML) 67 Page - STMicroelectronics |
67 / 82 page 67/82 ST62T35B/E35B 6 ELECTRICAL CHARACTERISTICS 6.1 ABSOLUTE MAXIMUM RATINGS This product contains devices to protect the inputs against damage due to high static voltages, how- ever it is advisable to take normal precaution to avoid application of any voltage higher than the specified maximum rated voltages. For proper operation it is recommended that VI and VO be higher than VSS and lower than VDD. Reliability is enhanced if unused inputs are con- nected to an appropriate logic voltage level (VDD or VSS). Power Considerations.The average chip-junc- tion temperature, Tj, in Celsius can be obtained from: Tj=TA + PD x RthJA Where:TA = Ambient Temperature. RthJA =Package thermal resistance (junc- tion-to ambient). PD = Pint + Pport. Pint =IDD x VDD (chip internal power). Pport =Port power dissipation (determined by the user). Notes: - Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended period s may affect device reliability. - (1) Within these limits, clamping diodes are guarantee to be not conductive. Voltages outside these limits are authorised as long as injection current is kept within the specification. Symbol Parameter Value Unit VDD Supply Voltage -0.3 to 7.0 V VI Input Voltage VSS - 0.3 to VDD + 0.3 (1) V VO Output Voltage VSS - 0.3 to VDD + 0.3 (1) V IO Current Drain per Pin Excluding VDD,VSS ±10 mA IVDD Total Current into VDD (source) 50 mA IVSS Total Current out of VSS (sink) 50 mA Tj Junction Temperature 150 °C TSTG Storage Temperature -60 to 150 °C 66 |
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