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FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• Low dark current
• High response
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-55
+100
°C
TO
Operating Temperature
-40
+85
°C
TS
Soldering Temperature*
+260
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
VR = 5V
1
5.0
nA
RSH
Shunt Resistance
VR = 10 mV
50
150
MW
CJ
Junction Capacitance
VR = 5V, f = 1 MHz
6
9
pF
lrange
Spectral Application Range
Spot Scan
800
1700
nm
R
Responsivity
l= 1310nm, VR = 5V
0.83
0.92
A/W
VBR
Breakdown Voltage
I = 1μA
18
V
NEP
Noise Equivalent Power
VR = 5V @ l=1310nm
1.79X10
-14
W/ √ Hz
tr
Response Time**
RL = 50 Ω,VR = 5V
1.15
nS
InGaAs Photodetectors
SD 012-11-41-211
The SD 012-11-41-211 is a high sensitivity low noise
characteristics InGaAs photodiode packaged in a
leaded hermetic TO-46 metal package.
• Communication
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 1310nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 3/30/06
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP
0.210 [5.33]
0.165 [4.19]
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
TO-46 PACKAGE
88°
0.184 [4.67]
0.145 [3.69]
0.059 [1.50]
0.50 [12.7]
3X 0.019 [0.48]
0.016 [0.40]
0.016 [0.40]
.0079 [.200] ACTIVE AREA
1 ANODE
SCHEMATIC
2 CASE GROUND
3 CATHODE
SPECTRAL RESPONSE
0
0.2
0.4
0.6
0.8
1
1.2
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Wavelength (nM)