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STB160NF3LL Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB160NF3LL
Descripción Electrónicos  N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET??II POWER MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB160NF3LL Datasheet(HTML) 3 Page - STMicroelectronics

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STB160NF3LL
SWITCHING ON (*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by Tjmax
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 15 V
ID = 80 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
50
350
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=24V ID=160A VGS=5V
95
25
45
125
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 80 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
150
120
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
160
640
A
A
VSD (*)
Forward On Voltage
ISD = 160 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 160 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
90
200
5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)


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