STB30NS15 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STB30NS15

Descripción Electrónicos	N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET??POWER MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB30NS15

Thermal Impedance

SWITCHING ON (*)

SWITCHING OFF(*)

SOURCE DRAIN DIODE(*)

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by Tjmax

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 75 V

ID =15 A

RG = 4.7 Ω

VGS = 10 V

(Resistive Load, Figure 3)

12

28

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=120V ID=30A VGS=10V

64

8

27

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 75 V

ID = 15 A

RG = 4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

50

12

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 120 V

ID = 30 A

RG = 4.7Ω,

VGS = 10 V

(Inductive Load, Figure 5)

50

17

11

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

30

120

A

VSD (*)

Forward On Voltage

ISD = 30 A

VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 30 A

di/dt = 100A/µs

VDD = 50 V

Tj = 150°C

(see test circuit, Figure 5)

190

1.25

13

ns

µC

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

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