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STB55NF03L Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STB55NF03L
Descripción Electrónicos  N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB55NF03L Datasheet(HTML) 1 Page - STMicroelectronics

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STB55NF03L
N-CHANNEL 30V - 0.01
Ω - 55A D2PAK
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.01
Ω
s
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s
LOW GATE CHARGE
s
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
LOW VOLTAGE DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
HIGH EFFICIENCY SWITCHING CIRCUITS
®
INTERNAL SCHEMATIC DIAGRAM
10/01/2000
1
3
D
2PAK
TO-263
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC55
A
ID
Drain Current (continuous) at Tc =100
oC39
A
IDM (
•)
Drain Current (pulsed)
220
A
Ptot
T otal Dissipat ion at Tc =25
oC80
W
Derating Factor
0.53
W /
o C
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
T YPE
VDSS
RDS(on)
ID
STB55NF03L
30 V
< 0.013
Ω
55 A
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
1/8


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