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STB60N06-14 Datasheet(PDF) 2 Page - STMicroelectronics |
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STB60N06-14 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Rthj-amb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 25 V) 600 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 150 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 50 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating x 0.8 Tc = 125 o C 250 1000 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V 100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 234 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 30 A VGS = 10 V ID = 30 A Tc = 100 oC 0.012 0.014 0.028 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 60 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 30 A 20 30 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 3900 950 250 4800 1200 320 pF pF pF STB60N06-14 2/6 |
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