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STB60NE06-16 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STB60NE06-16
Descripción Electrónicos  N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
™ ” POWER MOSFET
s
TYPICAL RDS(on) = 0.013
s
EXCEPTIONAL dV/dt CAPABILTY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
oC
s
HIGH dV/dt CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ” Single Feature Size
™ ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
RDS(on)
ID
STB60NE06-1
60 V
< 0.016
60 A
January 1998
1
3
D
2PAK
TO-263
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
60
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at Tc =25
oC60
A
ID
Drain Current (cont inuous) at Tc =100
oC42
A
IDM(
•)
Drain Current (pulsed)
240
A
Ptot
Tot al Dissipation at Tc =25
oC
150
W
Derating Fact or
1
W/
oC
dV/dt (1)
Peak Diode Recovery voltage slope
6
V/ ns
Tstg
St orage Temperature
-65 to 175
oC
Tj
Max. Operat ing Junction Temperat ure
175
oC
(
•) Pulse width limited by safe operating area
(1)ISD
≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,TJ ≤ TJMAX
1/9


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