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STD12N06L Datasheet(Hoja de datos) 2 Page - STMicroelectronics

No. de Pieza. STD12N06L
Descripción  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
Descarga  10 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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 2 page
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc- sink
Tl
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.33
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
12
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =25 V)
30
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
7mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max,
δ <1%)
8A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
for STD12N05L
for STD12N06L
50
60
V
V
IDSS
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 15 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA1
1.6
2.5
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =5 V
ID =6 A
0. 115
0. 15
ID(on)
On St ate Drain Current
VDS >ID(on) xRD S(on)max
VGS =10 V
12
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRD S(on)max
ID =6 A
4
8
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS =0
350
150
50
500
200
80
pF
pF
pF
STD12N05L/STD12N06L
2/10




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