Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼
Nombre de pieza
         Descripción


STD1HNC60 Datasheet(Hoja de datos) 2 Page - STMicroelectronics

No. de Pieza. STD1HNC60
Descripción  N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™II MOSFET
Descarga  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo 

   
 2 page
background image
STD1HNC60
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Rthj-sink
Thermal Resistance case-sink Typ
1.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1 A
45
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS =10V
2A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =1A
2S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
228
pF
Coss
Output Capacitance
40
pF
Crss
Reverse Transfer
Capacitance
6pF




Html Pages

1  2  3  4  5  6  7  8  9 


Datasheet Download



Número de Pieza relacionado

Número de PiezaDescripción de ComponentesHtml ViewFabricante
STP2HNC60N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STD3NC60N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STP2NC60N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STQ1HNC60N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STE40NC60N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STQ1NC60RN-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH™II Power MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STS1HNC60N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STP4NC60N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STS1NC60N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STB4NC60N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh™II MOSFET 1 2 3 4 5 MoreSTMicroelectronics

Enlace URL

¿ALLDATASHEET es útil para Ud.?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl