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1N6693SMSS Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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1N6693SMSS Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 1N66 __ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level ⏐ ⏐ L Package ____ = Axial SMS = Surface Mount Square Tab L Voltage 90 = 600 V 91 = 800 V 92 = 1000 V 93 = 1200 V 1N6690-1N6693 and 1N6690US-1N6693US 20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER Features: • Replaces DO-4 and DO-5 • Ultra Fast Recovery • PIV to 1200 Volts • Low Reverse Leakage • Hermetically Sealed Void-Free Construction3/ • Monolithic Single Chip Construction • High Surge Rating • Low Thermal Resistance • Available in Surface Mount Versions (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129). • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage 1N6690 & 1N6690US 1N6691 & 1N6691US 1N6692 & 1N6692US 1N6693 & 1N6693US VRRM VRWM VR 600 800 1000 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 100ºC) Io 20 Amps Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 375 Amps Operating & Storage Temperature Top & Tstg -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 " Junction to End Tab RθJL RθJE 3.0 2.5 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Specifics Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500. Axial Leaded SMS NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0143D DOC |
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