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SDR9510PUBTX Datasheet(PDF) 1 Page - Solid States Devices, Inc

No. de Pieza. SDR9510PUBTX
Descripción  50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier
Descarga  3 Pages
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Fabricante  SSDI [Solid States Devices, Inc]
Página de inicio  http://www.ssdi-power.com
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SDR9510PUBTX Datasheet(HTML) 1 Page - Solid States Devices, Inc

   
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0113C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SDR __
__
__ __
└ Screening
2/
___ = Not Screened
TX
= TX Level
TXV = TXV Level
S
= S Level
Lead Options
__= Straight Leads
DB = Bent Down
UB = Bent Up
Package
N = TO-258
P = TO-259
S2 = SMD2
Family/Voltage
958 = 800V
959 = 900V
9510 = 1000V
9511 = 1100V
9512 = 1200V
SDR958 thru SDR9512
Series
50 AMP
800 -1200 Volts
100 nsec
Ultrafast Recovery
Rectifier
Features:
• Ultra Fast Recovery: 80 nsec typical
• High Surge Rating
• Low Reverse Leakage Current
• Low Junction Capacitance
• Hermetically Sealed Package
• Faster Recovery Times Available – Contact Factory
TX, TXV, Space Level Screening Available - Consult
Factory
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR958
SDR959
SDR9510
SDR9511
SDR9512
VRRM
VRWM
VR
800
900
1000
1100
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)
3/
Io
50
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow
Junction to Reach Equilibrium Between Pulses, TA = 25ºC)
3/
IFSM
500
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
ºC
Maximum Thermal Resistance
Junction to Case3/
N&P
SMD2
RθJC
0.45
0.3
ºC/W
Notes:
1/ For Ordering Information, Price, Operating
Curves, and Availability - Contact Factory
2/ Screening per MIL-PRF-19500
3/ Pins 2&3 connected
TO-258
TO-259
SMD2


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