STD6NF10 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STD6NF10

Descripción Electrónicos	N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET??POWER MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STD6NF10

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 50 V

ID = 3 A

RG = 4.7 Ω

VGS = 10 V

(Resistive Load, Figure 3)

6

10

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 80 V ID = 6 A VGS= 10 V

10

2.5

4

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 50 V

ID = 6 A

RG = 4.7Ω,

VGS = 10 V

(Resistive Load, Figure 3)

20

3

ns

td(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 80 V

ID = 6 A

RG = 4.7Ω,

VGS = 10 V

(Inductive Load, Figure 5)

19

8

15

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

6

24

A

VSD (*)

Forward On Voltage

ISD = 6 A

VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 6 A

di/dt = 100A/µs

VDD = 10 V

Tj = 150°C

(see test circuit, Figure 5)

70

175

5

ns

nC

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

Número de pieza similar - STD6NF10

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STD6NF10	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET
VBsemi Electronics Co.,...	STD6NF10-1	1Mb / 9P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STD6NF10T4	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET
VBsemi Electronics Co.,...	STD6NF10T4	1,010Kb / 7P	N-Channel 100 V (D-S) MOSFET
STMicroelectronics	STD6NF10	333Kb / 14P	N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET

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Descripción similar - STD6NF10

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STD6NF10 Datasheet(PDF) 3 Page - STMicroelectronics

STD6NF10 Datasheet(HTML) 3 Page - STMicroelectronics

Número de pieza similar - STD6NF10

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