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STE180NE10 Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STE180NE10
Descripción  N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =50 V
ID =90 A
RG =4.7
VGS =10 V
(Resistive Load, see fig. 3)
35
100
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =80 V ID =180 A VGS = 10 V
142
37
60
185
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-off Delay T ime
Fall T ime
VDD =50 V
ID =90 A
RG =4.7
VGS =10 V
(Resistive Load, see fig. 3)
110
100
ns
ns
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =80 V
I D =180 A
RG =4.7
VGS =10 V
(Induct ive Load, see fig. 5)
100
50
92
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
180
540
A
A
VSD (
∗)Forward On Voltage
ISD = 180 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 180 A
di/dt = 100 A/
µs
VDD =50 V
T j = 150
oC
(see t est circuit, f ig. 5)
170
850
10
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STE180NE10
3/8




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