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STE250N06 Datasheet(Hoja de datos) 1 Page - STMicroelectronics

No. de Pieza. STE250N06
Descripción  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STE250N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR IN ISOTOP PACKAGE
s
HIGH CURRENT POWER MODULE
s
AVALANCHE RUGGED TECHNOLOGY
(SEE STH80N06 FOR RATING)
s
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s
EASY TO MOUNT
s
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s
EXTREMELY LOW Rth JUNCTION TO CASE
s
VERY LOW DRAIN TO CASE CAPACITANCE
s
VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
s
ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
s
SMPS & UPS
s
MOTOR CONTROL
s
WELDING EQUIPMENT
s
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
May 1995
TYPE
VDSS
RDS(on)
ID
STE250N06
60 V
< 0.004
250 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS = 0)
60
V
VDGR
Drain-Gate Voltage (RGS = 20 k
Ω)60
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
oC250
A
ID
Drain Current (continuous) at Tc = 100
oC155
A
IDM(
•)
Drain Current (pulsed)
750
A
Ptot
Total Dissipation at Tc = 25
oC450
W
Derating Factor
3.6
W/
oC
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
VISO
Insulation Withstand Voltage (AC-RMS)
2500
V
(
•) Pulse width limited by safe operating area
3
2
1
4
INTERNAL SCHEMATIC DIAGRAM
ISOTOP
1/8




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