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STE40NC60 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STE40NC60
Descripción Electrónicos  N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE40NC60 Datasheet(HTML) 3 Page - STMicroelectronics

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STE40NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300 V, ID = 20 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
49
ns
tr
Rise Time
42
ns
Qg
Total Gate Charge
VDD = 480V, ID = 40A,
VGS = 10V
307.5
430
nC
Qgs
Gate-Source Charge
48
nC
Qgd
Gate-Drain Charge
146.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
41
ns
tf
Fall Time
26
ns
tc
Cross-over Time
74
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
40
A
ISDM (2)
Source-drain Current (pulsed)
160
A
VSD (1)
Forward On Voltage
ISD = 40A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 40 A, di/dt = 100 A/µs,
VDD = 40 V, Tj = 150 °C
(see test circuit, Figure 5)
685
ns
Qrr
Reverse Recovery Charge
15
µC
IRRM
Reverse Recovery Current
44
A
Safe Operating Area
Thermal Impedence


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