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STE40NC60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STE40NC60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STE40NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300 V, ID = 20 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 49 ns tr Rise Time 42 ns Qg Total Gate Charge VDD = 480V, ID = 40A, VGS = 10V 307.5 430 nC Qgs Gate-Source Charge 48 nC Qgd Gate-Drain Charge 146.5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 40A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 41 ns tf Fall Time 26 ns tc Cross-over Time 74 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD = 40A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 40 A, di/dt = 100 A/µs, VDD = 40 V, Tj = 150 °C (see test circuit, Figure 5) 685 ns Qrr Reverse Recovery Charge 15 µC IRRM Reverse Recovery Current 44 A Safe Operating Area Thermal Impedence |
Número de pieza similar - STE40NC60 |
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Descripción similar - STE40NC60 |
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