SI1473DH datasheet(2/4 Pages) VISHAY

No. de pieza	SI1473DH

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si1473DH

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.2

V

On-State Drain Current

a

ID(on)

VDS ≤ −5 V, VGS = −10 V

55

A

VGS = −10 V, ID = −2 A

0.085

0.084

Drain-Source On-State Resistance

a

rDS(on)

VGS = −4.5 V, ID = −1.6 A

0.118

0.120

Ω

Forward Transconductance

a

gfs

VDS = −10 V, ID = −2 A

3

6

S

Diode Forward Voltage

a

VSD

IS = −2 A

−0.84

−0.85

V

Dynamic

b

Input Capacitance

Ciss

436

365

Output Capacitance

Coss

69

68

Reverse Transfer Capacitance

Crss

VDS = −15 V, VGS = 0 V, f = 1 MHz

51

pF

Total Gate Charge

Qg

4.1

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

VDS = −15 V, VGS = −4.5 V, ID = −2.5 A

1.7

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 74371

S-70349

Rev. A, 26-Feb-07

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