STE48NM50 datasheet(1/8 Pages) STMICROELECTRONICS

No. de pieza	STE48NM50

Descripción Electrónicos	N-CHANNEL 500V - 0.08ohm - 48A ISOTOP MDmesh?줡ower MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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September 2002

STE48NM50

N-CHANNEL 500V - 0.08

Ω - 48A ISOTOP

MDmesh™Power MOSFET

n

TYPICAL RDS(on) = 0.08Ω

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

100% AVALANCHE TESTED

n

LOW INPUT CAPACITANCE AND GATE

CHARGE

n

LOW GATE INPUT RESISTANCE

n

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STE48NM50

500V

< 0.1

Ω

48 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

48

A

ID

Drain Current (continuous) at TC = 100°C

30

A

IDM (l)

Drain Current (pulsed)

192

A

PTOT

Total Dissipation at TC = 25°C

450

W

Derating Factor

3.6

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1) ISD ≤48A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

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