STGB3NB60HD datasheet(2/8 Pages) STMICROELECTRONICS

No. de pieza	STGB3NB60HD

Descripción Electrónicos	N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT

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THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

T yp

1.78

62. 5

0.5

oC/W

ELECTRICAL CHARACTERISTICS (Tj =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitt er

Breakdown Voltage

IC =250

µAVGE = 0

600

V

ICES

Collector cut-of f

(VGE =0)

VCE =Max Rating

Tj =25

oC

VCE =Max Rating

Tj =125

oC

100

1000

µA

IGES

Gat e-Emitter Leakage

Current (VCE =0)

VGE =

± 20 V

VCE =0

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGE(th)

Gat e Threshold

Voltage

VCE =VGE

IC = 250

µA3

5

V

VCE(SAT )

Collector-Emitt er

Sat uration Voltage

VGE =15 V

IC =3 A

VGE =15 V

IC =3 A

Tj =125

oC

2.4

1.9

2. 8

V

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs

Forward

Transconductance

VCE =25 V

IC =3 A

1. 3

2.4

S

Cies

Coes

Cres

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VCE = 25V

f = 1MHz

VGE = 0

160

23

4. 5

235

33

6.6

300

43

8. 6

pF

QG

QGE

QGC

Tot al G ate Charge

Gat e-Emitter Charge

Gat e-Collector Charge

VCE = 480 V

IC =3 A

VGE =15 V

21

6

7.6

27

nC

ICL

Lat ching Current

Vclamp =480 V

RG=10

Ω

Tj = 150

oC

12

A

SWITCHING ON

Symbo l

Parameter

Test Co nditi ons

Min .

T yp.

Max.

Uni t

td(on)

tr

Delay Time

Rise Time

VCC = 480 V

IC =3 A

VGE=15 V

RG =10

Ω

16

30

ns

(di/dt)on

Eon(r)

Turn-on Current Slope

Turn-on Switching

Losses

VCC = 480 V

I C =3 A

RG =10

Ω

VGE =15 V

Tj = 125

oC

400

77

A/

µs

µJ

STGB3NB60HD

2/8

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