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STGP7NB60HDFP Datasheet(PDF) 2 Page - STMicroelectronics |
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STGP7NB60HDFP Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page  THERMAL DATA TO-220 T O-220FP Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 oC/W Rthj-amb Rthc-sink Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp 62.5 0.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tj =25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitt er Breakdown Voltage IC =250 µAVGE = 0 600 V ICES Collector cut-of f (VGE =0) VCE =Max Rating Tj =25 oC VCE =Max Rating Tj =125 oC 250 2000 µA µA IGES Gat e-Emitter Leakage Current (VCE =0) VGE = ± 20 V VCE =0 ± 100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gat e Threshold Voltage VCE =VGE IC = 250 µA3 5 V VCE(SAT ) Collector-Emitt er Sat uration Voltage VGE =15 V IC =7 A VGE =15 V IC =7 A Tj =125 oC 2.3 1.9 2. 8 V V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =25 V IC =7 A 3. 5 5 S Cies Coes Cres Input Capacitance Out put Capacitance Reverse Transfer Capacitance VCE = 25V f = 1MHz VGE = 0 390 45 10 560 68 15 730 90 20 pF pF pF QG QGE QGC Tot al G ate Charge Gat e-Emitter Charge Gat e-Collector Charge VCE = 480 V IC =7 A VGE =15 V 42 7.9 17.6 55 nC nC nC ICL Lat ching Current Vclamp =480 V RG=10 Ω Tj = 150 oC 28 A SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Delay Time Rise Time VCC = 480 V IC =7 A VGE=15 V RG =10 Ω 15 48 ns ns (di/dt)on Eon(r) Turn-on Current Slope Turn-on Switching Losses VCC =480 V I C =7 A RG =10 Ω VGE =15 V Tj =125 oC 160 185 A/ µs µJ STGP7NB60HD/FP 2/9 |
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