SIR890DP datasheet(5/7 Pages) VISHAY

No. de pieza	SIR890DP

Descripción Electrónicos	N-Channel 20-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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5 / 7 page

Document Number: 68644

S-81214-Rev. A, 02-Jun-08

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5

Vishay Siliconix

SiR890DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

22

44

66

88

110

0

255075

100

125

150

TC - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

12

24

36

48

60

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TA - Case Temperature (°C)

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SIR890DP Datasheet(PDF) 5 Page - Vishay Siliconix

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