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STB15NK50ZT4 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STB15NK50ZT4
Descripción Electrónicos  N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB15NK50ZT4 Datasheet(HTML) 2 Page - STMicroelectronics

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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
2/14
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤14A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
STP15NK50Z
STB15NK50Z
STB15NK50Z-1
STP15NK50ZFP
STW15NK50Z
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
14
14 (*)
14
A
ID
Drain Current (continuous) at TC = 100°C
8.8
8.8 (*)
8.8
A
IDM ( )
Drain Current (pulsed)
56
56 (*)
56
A
PTOT
Total Dissipation at TC = 25°C
160
40
160
W
Derating Factor
1.28
0.32
1.28
W/°C
IGS
Gate-source Current (DC)
± 20
mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.78
3.1
0.78
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max (#)
60
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
50
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
14
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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