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STP2NC70Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP2NC70Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page 3/13 STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 700 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.7 A 7.3 8.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 0.7 A 1.2 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 305 34 3.6 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 560V 28 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 350 V, ID = 0.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 11 8 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 560V, ID = 1.6 A, VGS = 10V 8 2 3.8 12 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 350 V, ID = 0.8 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 27 30 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 560V, ID = 1.6 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 20 5 25 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 1.4 5.6 A A VSD (1) Forward On Voltage ISD = 1.4 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.6 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 370 1.3 6.8 ns µC A |
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