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STP2NC70Z Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP2NC70Z
Descripción Electrónicos  N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP2NC70Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
700
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.7 A
7.3
8.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 0.7 A
1.2
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
305
34
3.6
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 560V
28
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 0.8 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
11
8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 560V, ID = 1.6 A,
VGS = 10V
8
2
3.8
12
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 350 V, ID = 0.8 A
RG =4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
27
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 560V, ID = 1.6 A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
20
5
25
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.4
5.6
A
A
VSD (1)
Forward On Voltage
ISD = 1.4 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.6 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
370
1.3
6.8
ns
µC
A


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