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STE30NK90Z Datasheet(Hoja de datos) 4 Page - STMicroelectronics

No. de Pieza. STE30NK90Z
Descripción  N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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Electrical characteristics
STE30NK90Z
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
900
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
10
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 150 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 14 A
0.21
0.26
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward
transconductance
VDS = 15 V, ID = 14 A
26
S
Ciss
Coss
Crss
Input capacitance
output capacitance
reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
12000
852
166
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0V,
VDS = 0V to 720 V
377
pF
td(on)
tr
td(off)
tf
Turn-on delay time
rise time
turn-off delay time
fall time
VDD = 450 V, ID = 13 A
RG =4.7Ω VGS = 10 V
(see Figure 14)
67
59
250
72
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
gate-source charge
gate-drain charge
VDD = 720 V, ID = 26 A,
VGS = 10V
(see Figure 15)
350
51
190
490
nC
nC
nC




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