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STE30NK90Z Datasheet(Hoja de datos) 5 Page - STMicroelectronics

No. de Pieza. STE30NK90Z
Descripción  N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STE30NK90Z
Electrical characteristics
5/13
2.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
Source-drain current
Source-drain current
(pulsed)
28
112
A
A
VSD
(2)
Forward on voltage
ISD = 28 A, VGS = 0
2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 16)
1
18.9
36.6
µs
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 16)
1.33
25.2
37.8
µs
µC
A
1.
Pulse width limited by safe operating area%
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5
Table 7.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (Open
Drain)
30
V




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