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STP36N05LFI Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP36N05LFI
Descripción Electrónicos  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP36N05LFI Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =25 V
ID =18 A
RG =50
Ω
VGS =5 V
(see test circuit, figure 3)
90
550
130
800
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =40 V
ID =36 A
RG =50
Ω
VGS =5 V
(see test circuit, figure 5)
85
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =36 A
VGS =5 V
35
11
19
50
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =40 V
ID =36 A
RG =50
Ω VGS =5 V
(see test circuit, figure 5)
110
180
310
160
260
450
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
VSD (
∗)
Forward On Volt age
ISD =36 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 36 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
(see test circuit, figure 5)
100
0.27
5.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP36N05L/FI
3/10


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