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STD3NM60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD3NM60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP4NM60 / STD3NM60 / STD3NM60-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±5 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A 1.3 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 1.5 A 2.7 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 324 132 7.4 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 9 4 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 3 A, VGS = 10V 10 3 4.7 14 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480 V, ID = 3 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 16.5 10.5 15 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 224 1 9 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 296 1.4 9.3 ns µC A |
Número de pieza similar - STD3NM60 |
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Descripción similar - STD3NM60 |
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