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STP60N05-14 Datasheet(PDF) 2 Page - STMicroelectronics

No. de Pieza. STP60N05-14
Descripción  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Descarga  5 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STP60N05-14 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
60
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
600
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ < 1%)
150
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100
oC, pulse width limited by Tj max, δ < 1%)
50
A
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
o C
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS
ID = 250
µA
234
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 30 A
VGS = 10 V
ID = 30 A
Tc = 100
oC
0.012
0.014
0.028
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max
VGS = 10 V
60
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 30 A
20
30
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
3900
950
250
4800
1200
320
pF
pF
pF
STP60N05-14/STP60N06-14
2/5


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