STP7NC40 datasheet(1/8 Pages) STMICROELECTRONICS

No. de pieza	STP7NC40

Descripción Electrónicos	N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMESH?줚I MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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March 2001

STP7NC40

N-CHANNEL 400V - 0.75

Ω - 6A TO-220

PowerMESH™II MOSFET

(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 0.75Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

DESCRIPTION

The PowerMESH™II is the evolution of the first gen-

eration of MESH OVERLAY™. The layout refine-

ments introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP7NC40

400 V

< 1

Ω

6 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

400

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

400

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuos) at TC = 25°C

6A

ID

Drain Current (continuos) at TC = 100°C

4A

IDM (q)

Drain Current (pulsed)

24

A

PTOT

Total Dissipation at TC = 25°C

100

W

Derating Factor

0.8

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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Descripción similar - STP7NC40

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STD6NC40	272Kb / 9P	N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET
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STP7NC40 Datasheet(PDF) 1 Page - STMicroelectronics

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