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LM3421 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LM3421 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 24 page  Symbol Parameter Conditions Min (Note 7) Typ (Note 8) Max (Note 7) Units R DPOL DPOL Pullup Resistance 500 1200 K Ω FAULT TIMER V FLTTH Fault Threshold 1.185 1.240 1.285 V I FLT Fault Pin Source Current 10 11.5 13 µA ERROR AMPLIFIER V REF CSH Reference Voltage With Respect to AGND 1.210 1.235 1.260 V Error Amplifier Input Bias Current -0.6 0 0.6 µA COMP Sink / Source Current 22 30 35 Transconductance 100 µA/V Linear Input Range (Note 9) ±125 mV Transconductance Bandwidth (Note 9) -6dB Unloaded Response 0.5 1.0 MHz OFF TIMER Minimum Off-time RCT = 1V through 1k Ω 35 75 ns R RCT RCT Reset Pull-down Resistance 36 120 Ω V RCT V IN/25 Reference Voltage V IN = 14V 540 565 585 mV f Continuous Conduction Switching Frequency 2.2nF > C T > 470pF 25/(C TRT) Hz PWM COMPARATOR COMP to PWM Offset 700 800 900 mV CURRENT LIMIT (IS) I LIM Current Limit Threshold 215 245 275 mV I LIM Delay to Output 35 75 ns Leading Edge Blanking Time 115 210 325 HIGH SIDE TRANSCONDUCTANCE AMPLIFIER Input Bias Current 11.5 µA Transconductance 20 119 mA/V Input Offset Current -1.5 0 1.5 µA Input Offset Voltage -7 0 7 mV Transconductance Bandwidth (Note 9) I CSH = 100µA 250 500 kHz GATE DRIVER (GATE) R SRC(GATE) GATE Sourcing Resistance GATE = High 2.0 6.0 Ω R SNK(GATE) GATE Sinking Resistance GATE = Low 1.3 4.5 DIM DRIVER (DIM, DDRV) nDIM VTH nDIM / UVLO Threshold 1.185 1.240 1.285 V nDIM HYS nDIM Hysteresis Current 20 23 25 µA R SRC(DDRV) DDRV Sourcing Resistance DDRV = High 13.5 30.0 Ω R SNK(DDRV) DDRV Sinking Resistance DDRV = Low 3.5 10.0 PULL-DOWN N-CHANNEL MOSFETS R RPD RPD Pull-down Resistance 145 300 Ω R FLT FLT Pull-down Resistance 145 300 R LRDY LRDY Pull-down Resistance 135 300 THERMAL SHUTDOWN T SD Thermal Shutdown Threshold 165 °C T HYS Thermal Shutdown Hysteresis 25 THERMAL RESISTANCE 5 www.national.com |
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Descripción similar - LM3421 |
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